inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF610A features low r ds(on) = 1.25 w( typ) lower input capacitance improved gate charge extended safe operating area rugged gate oxide technology description designed for use in switch mode power supplies and general purpose applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 200 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 3.3 a i dm drain current-single pluse 10 a p d total dissipation @t c =25 38 w t j max. operating junction temperature -55~150 t stg storage temperature -55~150 symbol parameter max unit r th j-c thermal resistance, junction to case 3.68 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF610A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 200 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =1.65a 1.5 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 200v; v gs = 0 v ds = 160v; v gs = 0; t j = 125 10 100 a v sd forward on-voltage i s = 3.3a; v gs = 0 1.5 v ciss input capacitance v ds =25v,v gs =0v, f=1.0mhz 210 pf coss output capacitance 44 pf crss reverse transfer capacitance 18 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =100v,i d =3.3a r g =24 30 ns tr rise time 30 ns td(off) turn-off delay time 50 ns tf fall time 35 ns pdf pdffactory pro www.fineprint.cn
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